RELAXATION OF RADIATION-DAMAGE IN SILICON PLANAR DETECTORS

被引：16

作者：

SCHMIDT, B ^{[1
]}

EREMIN, V ^{[1
]}

IVANOV, A ^{[1
]}

STROKAN, N ^{[1
]}

VERBITSKAYA, E ^{[1
]}

LI, Z ^{[1
]}

机构：

[1] BROOKHAVEN NATL LAB,UPTON,NY 11973

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 07期

关键词：

D O I：

10.1063/1.357356

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The behavior of radiation-induced carbon-related defects in high-resistivity silicon detectors has been investigated. The defects were introduced by alpha-particle irradiation and investigated by deep-level transient spectroscopy. An unusual defect behavior consists in low-temperature annealing, including self-annealing at room temperature, of the interstitial carbon C(i) with a simultaneous increase of the C(i)-O(i)-complex concentration. The kinetic parameters of the process have been determined from the increase of the C(i)-center concentration versus time. Two annealing velocities have been observed, which arise from different heat treatments during the detector fabrication process.

引用

页码：4072 / 4076

页数：5

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