MICROSTRUCTURE AND PROPERTIES OF CVD SILICON-NITRIDE FILMS

被引：1

作者：

POPOVA, LI ^{[1
]}

VITANOV, PK ^{[1
]}

ANTOV, BZ ^{[1
]}

PASHOV, NK ^{[1
]}

机构：

[1] BULGARIAN ACAD SCI,INST SOLID STATE PHYS,BU-1113 SOFIA,BULGARIA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1979年 / 31卷 / 03期

关键词：

D O I：

10.1016/0022-3093(79)90155-8

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：429 / 434

页数：6

共 6 条

[1] SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS USING SIH4-NH3-H2 SYSTEM [J].

BEAN, KE ;

GLEIM, PS ;

YEAKLEY, RL ;

RUNYAN, WR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) :733-&

[2] PREPARATION AND PROPERTIES OF AMORPHOUS SILICON NITRIDE FILMS [J].

CHU, TL ;

LEE, CH ;

GRUBER, GA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) :717-&

[3] STRUCTURE AND SODIUM MIGRATION IN SILICON NITRIDE FILMS [J].

DALTON, JV ;

DROBEK, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (08) :865-+

[4] PROPERTY CHANGES IN PYROLYTIC SILICON NITRIDE WITH REACTANT COMPOSITION CHANGES [J].

DOO, VY ;

KERR, DR ;

NICHOLS, DR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (01) :61-&

[5] CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE [J].

GEBHARDT, JJ ;

TANZILLI, RA ;

HARRIS, TA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (10) :1578-1582

[6] CONDUCTION PROCESSES IN SILICON NITRIDE [J].

KENDALL, EJM .

CANADIAN JOURNAL OF PHYSICS, 1968, 46 (22) :2509-&

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