NONDESTRUCTIVE CHARACTERIZATION OF NITROGEN-IMPLANTED SILICON-ON-INSULATOR STRUCTURES BY SPECTROSCOPIC ELLIPSOMETRY

被引:20
作者
FRIED, M
LOHNER, T
DENIJS, JMM
VANSILFHOUT, A
HANEKAMP, LJ
LACZIK, Z
KHANH, NQ
GYULAI, J
机构
关键词
D O I
10.1063/1.343779
中图分类号
O59 [应用物理学];
学科分类号
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页码:5052 / 5057
页数:6
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