FUNDAMENTAL OPTICAL-ABSORPTION EDGE OF SPUTTER-DEPOSITED ZIRCONIA AND YTTRIA

被引:23
作者
AITA, CR
KWOK, CK
机构
[1] Materials Department, University of Wisconsin-Milwaukee, Milwaukee, Wisconsin
关键词
films; optics; sputtering; yttria; zirconia;
D O I
10.1111/j.1151-2916.1990.tb06439.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Zirconia and yttria films were sputter deposited onto unheated fused silica substrates using a metal target and rare gas‐oxygen discharges. Double‐beam spectrophotometry was used to measure the transmission and reflection as a function of incident photon energy, E, from which the absorption coefficient, α(E), was calculated. An indirect interband transition at Ei= 4.70 eV and two direct interband transitions at Eg1= 5.17 eV and Eg2= 5.93 eV occur in monoclinic zirconia. Two direct interband transitions at Eg1= 5.07 eV and Eg2= 5.73 eV occur in cubic yttria. The absorption edge structure is modified when unusual phases, such as tetragonal zirconia, and zirconia and yttria with no longrange crystallographic order, are present. Copyright © 1990, Wiley Blackwell. All rights reserved
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页码:3209 / 3214
页数:6
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