EXCESS CAPACITANCE IN METAL-GAAS CONTACTS AS AN EFFECT OF NON-LINEAR DIELECTRIC SUSCEPTIBILITY

被引：9

作者：

PELLEGRINI, B

SALARDI, G

机构：

来源：

SOLID-STATE ELECTRONICS | 1978年 / 21卷 / 02期

关键词：

D O I：

10.1016/0038-1101(78)90279-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：465 / 469

页数：5

共 15 条

[1] ANOMALOUS BEHAVIOR OF SCHOTTKY BARRIER DIODES MADE ON LIGHTLY DOPED GAAS [J].

AMSTERDA.MF .

METALLURGICAL TRANSACTIONS, 1970, 1 (03) :643-&

[2] INTERFACE STATE DENSITY IN AU-NGAAS SCHOTTKY DIODES [J].

BORREGO, JM ;

GUTMANN, RJ ;

ASHOK, S .

SOLID-STATE ELECTRONICS, 1977, 20 (02) :125-132

[3] EFFECTS OF HIGH PHOSPHORUS CONCENTRATION ON DIFFUSION INTO SILICON [J].

DUFFY, MC ;

BARSON, F ;

FAIRFIEL.JM ;

SCHWUTTK.GH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (01) :84-&

[4] TRAPPING EFFECTS IN AU-N-TYPE GAAS SCHOTTKY BARRIER DIODES [J].

FURUKAWA, Y ;

ISHIBASHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (04) :503-+

[5] DETERMINATION OF DEEP LEVELS IN SEMICONDUCTORS FROM C-V MEASUREMENTS [J].

GLOVER, GH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (02) :138-&

[6]

GRIMMEISS HG, 1974, APR P C MET SEM CONT, P187

[7] DETAILED ANALYSIS OF METAL-SEMICONDUCTOR CONTACT [J].

PELLEGRINI, B .

SOLID-STATE ELECTRONICS, 1974, 17 (03) :217-237

[8] PROPERTIES OF SILICON-METAL CONTACTS VERSUS METAL WORK-FUNCTION, SILICON IMPURITY CONCENTRATION AND BIAS VOLTAGE [J].

PELLEGRINI, B .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (01) :55-68

[9] DEPLETION-LAYER CAPACITANCE OF ANY TYPE OF TRANSITION BETWEEN 2 MATERIALS [J].

PELLEGRINI, B .

SOLID-STATE ELECTRONICS, 1975, 18 (10) :887-889

[10] NEW QUANTUM AND ELECTRONIC THEORY OF METAL-SEMICONDUCTOR CONTACTS [J].

PELLEGRINI, B .

PHYSICAL REVIEW B, 1973, 7 (12) :5299-5312

← 1 2 →