STRUCTURAL CHARACTERISTICS OF RADIATION-DAMAGE PRODUCED BY HIGH-ENERGY (2.7 MEV) ION-IMPLANTATION IN GAAS

被引：5

作者：

NARAYANAN, GH

SPITZER, WG

机构：

来源：

关键词：

D O I：

10.1007/BF00808057

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2418 / 2428

页数：11

共 13 条

[1] ELECTRICAL AND STRUCTURE SENSITIVE MEASUREMENTS ON ION IMPLANTED GAAS
BICKNELL, R
BELL, EC
HEMMENT, PLF
TANSEY, JE
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 12 (01): : K9 - &
[2] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI
CSEPREGI, L
MAYER, JW
SIGMON, TW
[J]. PHYSICS LETTERS A, 1975, 54 (02) : 157 - 158
[3] Csepregi L., 1976, Radiation Effects, V28, P227, DOI 10.1080/00337577608237443
[4] Davidson S. M., 1970, Radiation Effects, V6, P33, DOI 10.1080/00337577008235043
[5] MEASUREMENTS OF LAYER THICKNESSES AND REFRACTIVE-INDEXES IN HIGH-ENERGY ION-IMPLANTED GAAS AND GAP
KACHARE, AH
SPITZER, WG
FREDRICKSON, JE
EULER, FK
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) : 5374 - 5381
[6] REFRACTIVE-INDEX OF ION-IMPLANTED GAAS
KACHARE, AH
SPITZER, WG
FREDRICKSON, JE
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) : 4209 - 4212
[7] INFRARED REFLECTION OF ION-IMPLANTED GAAS
KACHARE, AH
SPITZER, WG
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 2938 - 2946
[8] ELECTRICAL AND ELECTRON MICROSCOPE OBSERVATIONS ON ANTIMONY-IMPLANTED SILICON
MATTHEWS, MD
[J]. JOURNAL OF MATERIALS SCIENCE, 1969, 4 (11) : 997 - &
[9] Mazey D. J., 1969, Radiation Effects, V1, P229, DOI 10.1080/00337576908235565
[10] OBSERVATION OF ION BOMBARDMENT DAMAGE IN SILICON
MAZEY, DJ
NELSON, RS
BARNES, RS
[J]. PHILOSOPHICAL MAGAZINE, 1968, 17 (150): : 1145 - &