INTERACTIONS BETWEEN SEQUENTIAL DOPANT DIFFUSIONS IN SILICON - REVIEW

被引:37
作者
WILLOUGHBY, AFW [1 ]
机构
[1] UNIV SOUTHAMPTON, ENGN MAT LABS, SOUTHAMPTON SO9 5NH, HAMPSHIRE, ENGLAND
关键词
D O I
10.1088/0022-3727/10/4/011
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:455 / 480
页数:26
相关论文
共 75 条
[51]   ORIENTATION DEPENDENCE OF BORON DIFFUSION [J].
OKAMURA, M .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (07) :848-&
[52]   ARSENOSILICA FILM SOURCE FOR MICROWAVE TRANSISTOR [J].
PAREKH, PC ;
KOLMANN, K .
SOLID-STATE ELECTRONICS, 1974, 17 (04) :395-&
[55]  
PEART RF, 1972, RADIATION DAMAGE DEF, P170
[56]  
Prussin S., 1961, J APPL PHYS, V32, P1876, DOI [10.1063/1.1728256, DOI 10.1063/1.1728256]
[57]   DISTRIBUTION OF BORON-INDUCED DEFECTS IN SHALLOW DIFFUSED SURFACE LAYERS OF SILICON [J].
RUPPRECHT, H ;
SCHWUTTKE, GH .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) :2862-+
[58]   OXIDATION, DEFECTS AND VACANCY DIFFUSION IN SILICON [J].
SANDERS, IR ;
DOBSON, PS .
PHILOSOPHICAL MAGAZINE, 1969, 20 (167) :881-&
[59]  
SATO Y, 1964, JPN J APPL PHYS, V3, P511
[60]   NATURE OF KINK IN CARRIER PROFILE FOR PHOSPHORUS-DIFFUSED LAYERS IN SILICON [J].
SCHWETTMANN, FN ;
KENDALL, DL .
APPLIED PHYSICS LETTERS, 1972, 21 (01) :2-+