ON THE OXIDATION OF SILICON

被引:86
作者
MOTT, NF
机构
来源
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1987年 / 55卷 / 02期
关键词
D O I
10.1080/13642818708211199
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:117 / 129
页数:13
相关论文
共 81 条
[11]   DOMINANT MOVING SPECIES IN THE FORMATION OF AMORPHOUS NIZR BY SOLID-STATE REACTION [J].
CHENG, YT ;
JOHNSON, WL ;
NICOLET, MA .
APPLIED PHYSICS LETTERS, 1985, 47 (08) :800-802
[12]   MIGRATION OF METAL AND OXYGEN DURING ANODIC FILM FORMATION [J].
DAVIES, JA ;
DOMEIJ, B ;
PRINGLE, JPS ;
BROWN, F .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (07) :675-&
[13]   GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].
DEAL, BE ;
GROVE, AS .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&
[14]   KINETICS OF THERMAL-OXIDATION OF SILICON IN O2/H2O AND O2/CL2 MIXTURES [J].
DEAL, BE ;
HESS, DW ;
PLUMMER, JD ;
HO, CP .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (02) :339-346
[15]   OXIDATION OF SILICON - STRAIN AND LINEAR KINETICS [J].
DOREMUS, RH .
THIN SOLID FILMS, 1984, 122 (03) :191-196
[16]  
DOREMUS RH, 1977, PHYS CHEM, V80, P773
[17]   VISCOUS-FLOW OF THERMAL SIO2 [J].
EERNISSE, EP .
APPLIED PHYSICS LETTERS, 1977, 30 (06) :290-293
[18]   STRESS IN THERMAL SIO2 DURING GROWTH [J].
EERNISSE, FP .
APPLIED PHYSICS LETTERS, 1979, 35 (01) :8-10
[19]   DRY OXIDATION OF SILICON - A NEW MODEL OF GROWTH INCLUDING RELAXATION OF STRESS BY VISCOUS-FLOW [J].
FARGEIX, A ;
GHIBAUDO, G .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) :7153-7158
[20]   A REVISED ANALYSIS OF DRY OXIDATION OF SILICON [J].
FARGEIX, A ;
GHIBAUDO, G ;
KAMARINOS, G .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2878-2880