REACTION OF SI2H6 MOLECULE ON A SILICON SURFACE

被引：7

作者：

OHSHITA, Y ^{[1
]}

UESUGI, F ^{[1
]}

NISHIYAMA, I ^{[1
]}

机构：

[1] NEC CORP LTD,OPTOELECTR RES LABS,TSUKUBA,IBARAKI 305,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 115卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90803-D

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The disilane (Si2H6) decomposition process was studied by Si2H6 molecular beam mass spectrometry. The decomposition rates obtained on Si(100), Si(111), and SiO2 at 700-degrees-C were about 16%, 9%, and 0%, respectively. These values were almost constant above 700-degrees-C independently from substrate temperatures. SiH3 was found to be generated on Si(111), on the other hand, SiH4 was generated on a Si(100) surface. The difference of the decomposition reactions were interpreted in terms of a dangling bond structure.

引用

页码：551 / 555

页数：5

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