EFFECTS OF THIN SIO2 CAPPING LAYER ON SILICON-ON-INSULATOR FORMATION BY LATERAL SOLID-PHASE EPITAXY

被引:3
作者
KUSUKAWA, K
OHKURA, M
MONIWA, M
MIYAO, M
机构
[1] Central Research Laboratory, Hitachi Ltd., Kokubunji
关键词
D O I
10.1063/1.107381
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effects of a SiO2 capping layer over an amorphous Si surface on the lateral solid-phase epitaxy of Si are investigated. A thin SiO2 layer (about 5 nm) chemically grown on the deposited amorphous layer reduces the lateral crystal growth length. In addition, observations using a transmission electron microscope reveal that crystal defects are formed during lateral growth at the interface of the surface SiO2 and the deposited amorphous Si layer. These crystal defects are thought to be responsible for the reduction in crystal growth.
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页码:80 / 81
页数:2
相关论文
共 10 条
[1]   LATERAL SOLID-PHASE EPITAXY OF AMORPHOUS SI FILMS ON SI SUBSTRATES WITH SIO2 PATTERNS [J].
ISHIWARA, H ;
YAMAMOTO, H ;
FURUKAWA, S ;
TAMURA, M ;
TOKUYAMA, T .
APPLIED PHYSICS LETTERS, 1983, 43 (11) :1028-1030
[2]   INFLUENCE OF SIO2 CAP LAYERS ON LATERAL SOLID-PHASE EPITAXY OF IMPLANTED AMORPHOUS SI FILMS [J].
ISHIWARA, H ;
TOMITA, N ;
DAN, T ;
FURUKAWA, S .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 39 (1-4) :393-396
[3]   SOLID-PHASE LATERAL EPITAXY OF CHEMICAL-VAPOR-DEPOSITED AMORPHOUS-SILICON BY FURNACE ANNEALING [J].
KUNII, Y ;
TABE, M ;
KAJIYAMA, K .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2847-2849
[4]   ENHANCEMENT OF LATERAL SOLID-PHASE EPITAXY OVER SIO2 USING A DENSIFIED AND THINNED AMORPHOUS SI LAYER [J].
KUSUKAWA, K ;
MONIWA, M ;
OHKURA, M ;
TAKEDA, E .
APPLIED PHYSICS LETTERS, 1990, 56 (06) :560-562
[5]   LOW-TEMPERATURE SOI (SI-ON-INSULATOR) FORMATION BY LATERAL SOLID-PHASE EPITAXY [J].
MIYAO, M ;
MONIWA, M ;
KUSUKAWA, K ;
SINKE, W .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (06) :3018-3023
[6]   INFLUENCE OF SI FILM THICKNESS ON GROWTH ENHANCEMENT IN SI LATERAL SOLID-PHASE EPITAXY [J].
MONIWA, M ;
KUSUKAWA, K ;
MURAKAMI, E ;
WARABISAKO, T ;
MIYAO, M .
APPLIED PHYSICS LETTERS, 1988, 52 (21) :1788-1790
[7]  
MONIWA M, 1987 P S VLSI TECHN, P89
[8]   SEED SHAPE DEPENDENCE OF SI SOLID-PHASE EPITAXY - PREFERENTIAL FACET GROWTH [J].
MURAKAMI, E ;
MONIWA, M ;
KUSUKAWA, K ;
MIYAO, M ;
WARABISAKO, T ;
WADA, Y .
JOURNAL OF APPLIED PHYSICS, 1988, 63 (10) :4975-4978
[9]   ENHANCEMENT OF LATERAL SOLID-PHASE EPITAXIAL-GROWTH IN EVAPORATED AMORPHOUS SI FILMS BY PHOSPHORUS IMPLANTATION [J].
YAMAMOTO, H ;
ISHIWARA, H ;
FURUKAWA, S .
APPLIED PHYSICS LETTERS, 1985, 46 (03) :268-270
[10]   ORIENTATION DEPENDENCE OF LATERAL SOLID-PHASE-EPITAXIAL GROWTH IN AMORPHOUS SI FILMS [J].
YAMAMOTO, H ;
ISHIWARA, H ;
FURUKAWA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (05) :667-672