LOW-TEMPERATURE SOI (SI-ON-INSULATOR) FORMATION BY LATERAL SOLID-PHASE EPITAXY

被引：35

作者：

MIYAO, M

MONIWA, M

KUSUKAWA, K

SINKE, W

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 06期

关键词：

D O I：

10.1063/1.341565

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：3018 / 3023

页数：6

相关论文

共 27 条

[1] BARGER RM, 1976, FUNDAMENTALS SILICON, V1, P205
[2] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI
CSEPREGI, L
MAYER, JW
SIGMON, TW
[J]. PHYSICS LETTERS A, 1975, 54 (02) : 157 - 158
[3] DETERMINATION OF EXISTING STRESS IN SILICON FILMS ON SAPPHIRE SUBSTRATE USING RAMAN-SPECTROSCOPY
ENGLERT, T
ABSTREITER, G
PONTCHARRA, J
[J]. SOLID-STATE ELECTRONICS, 1980, 23 (01) : 31 - 33
[4] FAN J, 1987, MRS S P, V91
[5] ZONE-MELTING RECRYSTALLIZATION OF ENCAPSULATED SILICON FILMS ON SIO2 - MORPHOLOGY AND CRYSTALLOGRAPHY
GEIS, MW
SMITH, HI
TSAUR, BY
FAN, JCC
MABY, EW
ANTONIADIS, DA
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 158 - 160
[6] MICRO-PROBE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION TECHNIQUE .2. OBSERVATION OF ALUMINUM EPITAXIAL-GROWTH ON A POLYCRYSTAL-SILICON SURFACE BY VACUUM EVAPORATION
ICHIKAWA, M
HAYAKAWA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (01): : 154 - 163
[7] LATERAL SOLID-PHASE EPITAXY OF AMORPHOUS SI FILMS ON SI SUBSTRATES WITH SIO2 PATTERNS
ISHIWARA, H
YAMAMOTO, H
FURUKAWA, S
TAMURA, M
TOKUYAMA, T
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (11) : 1028 - 1030
[8] EFFECT OF HEAT-TREATMENT ON RESIDUAL-STRESS AND ELECTRON HALL-MOBILITY OF LASER ANNEALED SILICON-ON-SAPPHIRE
KOBAYASHI, Y
NAKAMURA, M
SUZUKI, T
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (12) : 1040 - 1042
[9] SHORT-CHANNEL MOS FETS FABRICATED BY SELF-ALIGNED ION-IMPLANTATION AND LASER ANNEALING
KOYANAGI, M
TAMURA, H
MIYAO, M
HASHIMOTO, N
TOKUYAMA, T
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (08) : 621 - 623
[10] SOLID-PHASE LATERAL EPITAXY OF CHEMICAL-VAPOR-DEPOSITED AMORPHOUS-SILICON BY FURNACE ANNEALING
KUNII, Y
TABE, M
KAJIYAMA, K
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2847 - 2849