PECVD SILICON-NITRIDE DIAPHRAGMS FOR CONDENSER MICROPHONES

被引：25

作者：

SCHEEPER, PR

VOORTHUYZEN, JA

BERGVELD, P

机构：

[1] University of Twente, 7500 AE Enschede

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1991年 / 4卷 / 1-2期

关键词：

D O I：

10.1016/0925-4005(91)80180-R

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The application of plasma-enhanced chemical vapour deposited (PECVD) silicon nitride as a diaphragm material for condenser microphones has been investigated. By means of adjusting the SiH4/NH3 gas-flow composition, silicon-rich silicon nitride films have been obtained with a relatively low tensile stress. Aluminum can be etched selectively with respect to the silicon nitride films. Using aluminum as a sacrificial layer, 300 x 300-mu-m silicon nitride diaphragms have been made. Admittance measurements on silicon nitride capacitances have shown that the insulating properties are sufficiently good for application as a microphone diaphragm.

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页码：79 / 84

页数：6

相关论文

共 13 条

[1] A COMPARISON BETWEEN SILICON-NITRIDE FILMS MADE BY PCVD OF N2-SIH4/AR AND N2-SIH4/HE [J].

ALLAERT, K ;

VANCALSTER, A ;

LOOS, H ;

LEQUESNE, A .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (07) :1763-1766

[2] INFLUENCE OF DEPOSITION TEMPERATURE, GAS-PRESSURE, GAS-PHASE COMPOSITION, AND RF FREQUENCY ON COMPOSITION AND MECHANICAL-STRESS OF PLASMA SILICON-NITRIDE LAYERS [J].

CLAASSEN, WAP ;

VALKENBURG, WGJN ;

WILLEMSEN, MFC ;

VANDERWIJGERT, WM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (04) :893-898

[3] MECHANISMS OF PLASMA-ENHANCED SILICON-NITRIDE DEPOSITION USING SIH4-N2 MIXTURE [J].

DUN, H ;

PAN, P ;

WHITE, FR ;

DOUSE, RW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (07) :1555-1563

[4] A SIMPLE TECHNIQUE FOR THE DETERMINATION OF MECHANICAL STRAIN IN THIN-FILMS WITH APPLICATIONS TO POLYSILICON [J].

GUCKEL, H ;

RANDAZZO, T ;

BURNS, DW .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (05) :1671-1675

[5] A SUBMINIATURE CONDENSER MICROPHONE WITH SILICON-NITRIDE MEMBRANE AND SILICON BACK PLATE [J].

HOHM, D ;

HESS, G .

JOURNAL OF THE ACOUSTICAL SOCIETY OF AMERICA, 1989, 85 (01) :476-480

[6]

HOWE RT, 1983, SENSOR ACTUATOR, V5, P447

[7] MEASUREMENT OF STRAINS AT SI-SIO2 INTERFACE [J].

JACCODINE, RJ ;

SCHLEGEL, WA .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (06) :2429-+

[8]

Kiermasz A., 1987, Le Vide les Couches Minces, P237

[9] PLASMA DEPOSITION AND CHARACTERIZATION OF THIN SILICON-RICH SILICON-NITRIDE FILMS [J].

NGUYEN, SV ;

FRIDMANN, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (09) :2324-2329

[10] THE CORRELATIONS BETWEEN PHYSICAL AND ELECTRICAL-PROPERTIES OF PECVD SIN WITH THEIR COMPOSITION RATIOS [J].

SAMUELSON, GM ;

MAR, KM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) :1773-1778