ASSESSMENT OF GAAS HETEROEPITAXIAL FILMS GROWN ON SILICON-ON-SAPPHIRE UPGRADED BY DOUBLE SOLID-PHASE EPITAXY

被引：6

作者：

POSTHILL, JB

MARKUNAS, RJ

HUMPHREYS, TP

NEMANICH, RJ

DAS, K

PARIKH, NR

ROSS, PL

MINER, CJ

机构：

[1] N CAROLINA STATE UNIV,DEPT PHYS,RALEIGH,NC 27695

[2] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695

[3] N CAROLINA STATE UNIV,DEPT PHYS & ASTRON,RALEIGH,NC 27695

[4] BELL NO RES,OTTAWA K1Y 4H7,ONTARIO,CANADA

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 17期

关键词：

D O I：

10.1063/1.102208

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1756 / 1758

页数：3

共 14 条

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PARIKH, NR .

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[9]

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