TRENDS IN ADVANCED PROCESS TECHNOLOGY - SUBMICROMETER CMOS DEVICE DESIGN AND PROCESS REQUIREMENTS

[61] PLANAR DEPOSITION OF ALUMINUM BY RF-DC SPUTTERING WITH RF BIAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (06) : 1466 - 1472

[62] INTERMETALLIC COMPOUNDS OF AL AND TRANSITIONS METALS - EFFECT OF ELECTROMIGRATION IN 1-2-MUM-WIDE LINES [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 4083 - 4093

[63] A BETTER UNDERSTANDING OF CMOS LATCH-UP [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (01) : 62 - 67

[64] Jerdonek R., 1982, International Electron Devices Meeting. Technical Digest, P450

[65] JONES RE, 1985, 2ND P INT IEEE VLSI, P194

[66] CMOS DEVICE ISOLATION USING THE SELECTIVE-ETCH-AND-REFILL-WITH-EPI (SEREPI) PROCESS [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) : 617 - 619

[67] KANEKO H, 1985, DEC IEDM, P208

[68] ELECTRON-BEAM LITHOGRAPHY IN N+ SELF-ALIGNED GAAS-MESFET FABRICATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (06) : 663 - 668

[69] MO-TIW CONTACT FOR VLSI APPLICATIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (07) : 1328 - 1333

[70] MO2N/MO GATE MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (06) : 598 - 602

[61] PLANAR DEPOSITION OF ALUMINUM BY RF-DC SPUTTERING WITH RF BIAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (06) : 1466 - 1472

[62] INTERMETALLIC COMPOUNDS OF AL AND TRANSITIONS METALS - EFFECT OF ELECTROMIGRATION IN 1-2-MUM-WIDE LINES [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 4083 - 4093

[63] A BETTER UNDERSTANDING OF CMOS LATCH-UP [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (01) : 62 - 67

[64] Jerdonek R., 1982, International Electron Devices Meeting. Technical Digest, P450

[65] JONES RE, 1985, 2ND P INT IEEE VLSI, P194

[66] CMOS DEVICE ISOLATION USING THE SELECTIVE-ETCH-AND-REFILL-WITH-EPI (SEREPI) PROCESS [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) : 617 - 619

[67] KANEKO H, 1985, DEC IEDM, P208

[68] ELECTRON-BEAM LITHOGRAPHY IN N+ SELF-ALIGNED GAAS-MESFET FABRICATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (06) : 663 - 668

[69] MO-TIW CONTACT FOR VLSI APPLICATIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (07) : 1328 - 1333

[70] MO2N/MO GATE MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (06) : 598 - 602