DAMAGE FORMATION AND ANNEALING OF HIGH-ENERGY ION-IMPLANTATION IN SI

被引：49

作者：

TAMURA, M

SUZUKI, T

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 39卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(89)90795-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：318 / 329

页数：12

共 26 条

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[9]

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