FORMATION OF SELF-ALIGNED TISI2 FOR VERY LARGE-SCALE INTEGRATED CONTACTS AND INTERCONNECTS

被引：25

作者：

HO, VQ

POULIN, D

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.574605

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1396 / 1401

页数：6

共 17 条

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[6] CHARACTERIZATION OF RAPIDLY ANNEALED MO-POLYCIDE [J].

HO, VQ ;

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03) :896-898

[7] FILM PROPERTIES OF MOSI2 AND THEIR APPLICATION TO SELF-ALIGNED MOSI2 GATE MOSFET [J].

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[8]

MURARKA SP, 1983, SILICIDES VLSI APPLI, P30

[9]

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[10]

NAEM A, COMMUNICATION

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