ENHANCEMENT OF FREE-CARRIER CONCENTRATION IN N-TYPE ALXGA1-X AS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY IN THE TEMPERATURE-RANGE 850-950-DEGREE-C

被引：5

作者：

BASMAJI, P

ZAOUK, A

GIBART, P

GAUTHIER, D

PORTAL, JC

机构：

[1] CNRS, SERV NATL CHAMPS INTENSES, F-38042 GRENOBLE, FRANCE

[2] INST NATL SCI APPL LYON, F-31077 TOULOUSE, FRANCE

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 12期

关键词：

D O I：

10.1063/1.100775

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1121 / 1123

页数：3

共 14 条

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[5]

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