IMPACT IONIZATION, RECOMBINATION, AND VISIBLE-LIGHT EMISSION IN ALGAAS/GAAS HIGH ELECTRON-MOBILITY TRANSISTORS

被引：19

作者：

ZANONI, E ^{[1
]}

PACCAGNELLA, A ^{[1
]}

PISONI, P ^{[1
]}

TELAROLI, P ^{[1
]}

TEDESCO, C ^{[1
]}

CANALI, C ^{[1
]}

TESTA, N ^{[1
]}

MANFREDI, M ^{[1
]}

机构：

[1] UNIV PARMA,DIPARTMENTO FIS,I-43100 PARMA,ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 01期

关键词：

D O I：

10.1063/1.350269

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This communication describes a detailed experimental investigation of light emitted from AlGaAs/GaAs high electron mobility transistors biased at high drain voltages where impact ionization occurs. We present the electroluminescence spectra in 1.1-3.1 eV energy range. The strong correlation of the integrated intensity of photons with hv > 1.7 eV with the product of hole current generated by impact ionization and of electron current indicates that the recombination process is the main mechanism for visible light emission.

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收藏

页码：529 / 531

页数：3

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