GAAS GROWTH-PROPERTIES ON V-GROOVED SI SUBSTRATES

[1] GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (11): : L843 - L845

[2] AKIYAMA M, 1984, J CRYST GROWTH, V68, P21, DOI 10.1016/0022-0248(84)90391-9

[3] MONOLITHIC INTEGRATION OF GAAS/ALGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS AND N-METAL-OXIDE-SEMICONDUCTOR SILICON CIRCUITS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (09) : 983 - 985

[4] GAAS BIPOLAR-TRANSISTORS GROWN ON (100) SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1985, 47 (04) : 397 - 399

[5] GAAS SHALLOW-HOMOJUNCTION SOLAR-CELLS ON GE-COATED SI SUBSTRATES [J]. ELECTRON DEVICE LETTERS, 1981, 2 (07): : 169 - 171

[6] ALGAAS HETEROJUNCTION VISIBLE (700 NM) LIGHT-EMITTING-DIODES ON SI SUBSTRATES FABRICATED BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1986, 48 (23) : 1617 - 1619

[7] EPITAXIALLY INDUCED STRESS IN GAAS LAYER ON V-GROOVED SI AND GAAS SUBSTRATES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (07): : L1128 - L1130

[8] SELECTIVE EMBEDDED GROWTH OF ALXGA1-XAS BY LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (01): : L10 - L12

[9] SELECTIVE EPITAXIAL-GROWTH OF GAAS BY LOW-PRESSURE MOVPE [J]. JOURNAL OF CRYSTAL GROWTH, 1985, 73 (01) : 73 - 76

[10] SELF-ANNIHILATION OF ANTIPHASE BOUNDARY IN GAAS ON SI(100) GROWN BY MOLECULAR-BEAM EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (06): : L944 - L946

[1] GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (11): : L843 - L845

[2] AKIYAMA M, 1984, J CRYST GROWTH, V68, P21, DOI 10.1016/0022-0248(84)90391-9

[3] MONOLITHIC INTEGRATION OF GAAS/ALGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS AND N-METAL-OXIDE-SEMICONDUCTOR SILICON CIRCUITS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (09) : 983 - 985

[4] GAAS BIPOLAR-TRANSISTORS GROWN ON (100) SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1985, 47 (04) : 397 - 399

[5] GAAS SHALLOW-HOMOJUNCTION SOLAR-CELLS ON GE-COATED SI SUBSTRATES [J]. ELECTRON DEVICE LETTERS, 1981, 2 (07): : 169 - 171

[6] ALGAAS HETEROJUNCTION VISIBLE (700 NM) LIGHT-EMITTING-DIODES ON SI SUBSTRATES FABRICATED BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1986, 48 (23) : 1617 - 1619

[7] EPITAXIALLY INDUCED STRESS IN GAAS LAYER ON V-GROOVED SI AND GAAS SUBSTRATES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (07): : L1128 - L1130

[8] SELECTIVE EMBEDDED GROWTH OF ALXGA1-XAS BY LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (01): : L10 - L12

[9] SELECTIVE EPITAXIAL-GROWTH OF GAAS BY LOW-PRESSURE MOVPE [J]. JOURNAL OF CRYSTAL GROWTH, 1985, 73 (01) : 73 - 76

[10] SELF-ANNIHILATION OF ANTIPHASE BOUNDARY IN GAAS ON SI(100) GROWN BY MOLECULAR-BEAM EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (06): : L944 - L946