PARALLEL STRESS AND PERPENDICULAR STRAIN DEPTH DISTRIBUTIONS IN [001] SILICON AMORPHIZED BY ION-IMPLANTATION

被引：8

作者：

FABBRI, R

SERVIDORI, M

ZANI, A

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 10期

关键词：

D O I：

10.1063/1.343830

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4715 / 4718

页数：4

共 13 条

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