DEPOSITION OF GA, AL AND AS LAYERS BY LASER-ASSISTED DECOMPOSITION OF TRIMETHYLGALLIUM, TRIMETHYLALUMINUM AND ARSINE

We have investigated the substrate temperature dependence of deposition rates for Ga, Al and As layers formed on fused quartz (Suprasil) substrates by ArF excimer laser-assisted chemical vapor deposition using trimethylgallium, trimethylaluminum and arsine as source materials, respectively. The deposition rates for Ga and Al were independent of substrate temperature in the range from 100°C to 400°C, and then increased with substrate temperature above 400°C. On the other hand, the As deposition rate decreased dramatically with increasing substrate temperature up to 300°C. The result of As deposition can be explained qualitatively by three competing processes of the laser decomposition of arsine and laser and/or thermal desorptions of the As atom. © 1990 The Japan Society of Applied Physics.