OXYGEN BEHAVIOR DURING TITANIUM SILICIDE FORMATION BY RAPID THERMAL ANNEALING

被引：30

作者：

PANTEL, R ^{[1
]}

LEVY, D ^{[1
]}

NICOLAS, D ^{[1
]}

PONPON, JP ^{[1
]}

机构：

[1] CTR RECH NUCL,PHASE GRP,CNRS,UA 292,F-67037 STRASBOURG,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 10期

关键词：

D O I：

10.1063/1.339062

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4319 / 4321

页数：3

共 22 条

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[2] TRANSIENT ANNEALING AS A TOOL FOR THE INVESTIGATION OF THIN-FILM SUBSTRATE SOLID-PHASE REACTIONS
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[3] GROWTH AND STRUCTURE OF TITANIUM SILICIDE PHASES FORMED BY THIN TI FILMS ON SI CRYSTALS
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[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) : 270 - 275
[4] TITANIUM AND NICKEL SILICIDE FORMATION AFTER Q-SWITCHED LASER AND MULTI-SCANNING ELECTRON-BEAM IRRADIATION
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[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) : 1525 - 1531
[5] TITANIUM SILICIDE FORMATION - EFFECT OF OXYGEN DISTRIBUTION IN THE METAL-FILM
BERTI, M
DRIGO, AV
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BENTINI, GG
NIPOTI, R
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[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3558 - 3565
[6] THERMODYNAMIC CONSIDERATIONS IN REFRACTORY METAL-SILICON-OXYGEN SYSTEMS
BEYERS, R
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (01) : 147 - 152
[7] DAVID D, 1983, J ELECTROCHEM SOC, V130, P1423, DOI 10.1149/1.2119966
[8] DHEURLE FM, 1986, MATER RES SOC S P, V52, P261
[9] KINETICS OF TISI2 FORMATION BY THIN TI FILMS ON SI
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MAYER, JW
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[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5076 - 5080
[10] Lau C. K., 1982, International Electron Devices Meeting. Technical Digest, P714

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