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REACTIVE ION ETCHING OF GAAS WITH HIGH ASPECT RATIOS WITH CL2-CH4-H2-AR MIXTURES

被引：47
作者：
VODJDANI, N
PARRENS, P
机构：
[1] PHILIPS RES ORG,ELECTR & PHYS APPL LABS,F-94451 LIMEIL BREVANNES,FRANCE
[2] NEXTRAL,F-38243 MEYLAN,FRANCE
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 06期
关键词：
D O I：
10.1116/1.583634
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1591 / 1598
页数：8
相关论文
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