THE VIBRATIONAL-MODES OF SILICON ACCEPTORS IN P-TYPE GAAS GROWN BY MOLECULAR-BEAM EPITAXY ON A (111)A PLANE

被引：9

作者：

ASHWIN, MJ

FAHY, MR

NEWMAN, RC

机构：

[1] Interdisciplinary Research Centre for Semiconductor Materials, Blackett Laboratory, Imperial College

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 07期

关键词：

D O I：

10.1063/1.352913

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silicon impurities in p-type GaAs grown by molecular beam epitaxy occupy As lattice sites and give rise to an infrared active localized vibrational mode (LVM) which appears as a Fano profile near 395 cm-1 in samples with p = 10(19) cm-3 or 10(20) cm-3 . 2 MeV electron irradiation reduces p, leading to the emergence of the usual LVM absorption line of Si(As) at 399 cm-1. The treatment also leads to site switching to produce Si(Ga) donors giving an LVM at 384 cm-1.

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页码：3574 / 3576

页数：3

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