TEM INSITU OBSERVATION OF ELECTROMIGRATION DAMAGE IN AL-CU STRIPS .1. CONSTANT DC STRESSING

被引：19

作者：

VAVRA, I

LOBOTKA, P

ZACHAR, F

OSVALD, J

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1981年 / 63卷 / 01期

关键词：

D O I：

10.1002/pssa.2210630147

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：363 / 370

页数：8

共 13 条

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[7] ACTIVATION-ENERGY FOR ELECTROMIGRATION FAILURE IN ALUMINUM FILMS CONTAINING COPPER [J].

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[8]

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[10] CONTROVERSY ABOUT DIRECTION OF ELECTROTRANSPORT IN THIN GOLD-FILMS [J].

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