SATURATION OF RADIATION-INDUCED THRESHOLD-VOLTAGE SHIFTS IN THIN-OXIDE MOSFETS AT 80-K

被引：7

作者：

KLEIN, RB ^{[1
]}

SAKS, NS ^{[1
]}

SHANFIELD, Z ^{[1
]}

机构：

[1] USN, RES LAB, WASHINGTON, DC 20375 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1990年 / 37卷 / 06期

关键词：

D O I：

10.1109/23.101178

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hole trapping in thin-oxide MOSFETs at 80 K is examined. The existing “field-collapse” model accurately predicts saturation of the hole trapping in a 26 nm oxide, but overestimates the saturation by a factor of two in a 9.5 nm oxide. A revised model, which incorporates recombination of electrons with previously trapped holes, improves the fit between the model and the data. © 1990 IEEE

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页码：1690 / 1695

页数：6

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