HIGH-PERFORMANCE INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH HIGHLY CARBON-DOPED BASE GROWN BY CHEMICAL BEAM EPITAXY

被引：11

作者：

SONG, JI

PALMSTROM, CJ

VANDERGAAG, BP

HONG, WP

HAYES, JR

CHOUGH, KB

机构：

[1] Bellcore, Red Bank, NJ 07701

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 08期

关键词：

TRANSISTORS; BIPOLAR DEVICES; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19930446

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InP/In0.53Ga0.4As heterojunction bipolar transistors (HBTs) using a highly carbon-doped base are reported. High carbon doping has been achieved by chemical beam epitaxy (CBE). The resulting hole concentration in the carbon-doped base is as high as 7 x 10(19)/cm3. To our knowledge, this is the highest doping level reported using carbon. HBTs with a 20 angstrom spacer layer exhibited nearly ideal I-V characteristics with collector and base current ideality factor of 1.018 and 1.037, respectively. Current gain and breakdown voltage BV(CEO) were 7 and 6 V, respectively.

引用

收藏

页码：666 / 667

页数：2

相关论文

共 10 条

[1] ATOMIC LAYER EPITAXY GROWN HETEROJUNCTION BIPOLAR-TRANSISTOR HAVING A CARBON-DOPED BASE [J].

BHAT, R ;

HAYES, JR ;

COLAS, E ;

ESAGUI, R .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (09) :442-443

[2] SUBPICOSECOND INP/INGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS [J].

CHEN, YK ;

NOTTENBURG, RN ;

PANISH, MB ;

HAMM, RA ;

HUMPHREY, DA .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (06) :267-269

[3] INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY WITH CARBON-DOPED BASE [J].

GEE, RC ;

CHIN, TP ;

TU, CW ;

ASBECK, PM ;

LIN, CL ;

KIRCHNER, PD ;

WOODALL, JM .

IEEE ELECTRON DEVICE LETTERS, 1992, 13 (05) :247-249

[4] ULTRAHIGH BE DOPING OF GA0.47IN0.53AS BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY [J].

HAMM, RA ;

PANISH, MB ;

NOTTENBURG, RN ;

CHEN, YK ;

HUMPHREY, DA .

APPLIED PHYSICS LETTERS, 1989, 54 (25) :2586-2588

[5] INP/IN0.53GA0.47AS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A CARBON-DOPED BASE GROWN BY MOCVD [J].

HANSON, AW ;

STOCKMAN, SA ;

STILLMAN, GE .

IEEE ELECTRON DEVICE LETTERS, 1992, 13 (10) :504-506

[6] ABNORMAL REDISTRIBUTION OF ZN IN INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR STRUCTURES [J].

KURISHIMA, K ;

KOBAYASHI, T ;

GOSELE, U .

APPLIED PHYSICS LETTERS, 1992, 60 (20) :2496-2498

[7]

LEE W, 1986, IEEE ELECTR DEVICE L, V7, P683, DOI 10.1109/EDL.1986.26519

[8] STABILITY OF CARBON AND BERYLLIUM-DOPED BASE GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

REN, F ;

FULLOWAN, TR ;

LOTHIAN, J ;

WISK, PW ;

ABERNATHY, CR ;

KOPF, RF ;

EMERSON, AB ;

DOWNEY, SW ;

PEARTON, SJ .

APPLIED PHYSICS LETTERS, 1991, 59 (27) :3613-3615

[9] DIFFUSIVE BASE TRANSPORT IN NARROW BASE INP/GA0.47IN0.53AS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

RITTER, D ;

HAMM, RA ;

FEYGENSON, A ;

PANISH, MB ;

CHANDRASEKHAR, S .

APPLIED PHYSICS LETTERS, 1991, 59 (26) :3431-3433

[10]

YAMAHATA S, 1992, IEEE DEVICE RES C DI