GA0.47IN0.53AS HOMOJUNCTION PHOTO-DIODE - NEW AVALANCHE PHOTODETECTOR IN NEAR-INFRARED BETWEEN 1.0 AND 1.6 MU-M

被引:95
作者
PEARSALL, TP
PAPUCHON, M
机构
关键词
D O I
10.1063/1.90447
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:640 / 642
页数:3
相关论文
共 19 条
  • [11] BAND-STRUCTURE DEPENDENCE OF IMPACT IONIZATION BY HOT CARRIERS IN SEMICONDUCTORS - GAAS
    PEARSALL, T
    CAPASSO, F
    NAHORY, RE
    POLLACK, MA
    CHELIKOWSKY, JR
    [J]. SOLID-STATE ELECTRONICS, 1978, 21 (01) : 297 - 302
  • [12] GROWTH OF GAXIN1-XAS ON (100) INP BY LIQUID-PHASE EPITAXY
    PEARSALL, TP
    BISARO, R
    ANSEL, R
    MERENDA, P
    [J]. APPLIED PHYSICS LETTERS, 1978, 32 (08) : 497 - 499
  • [13] GROWTH AND CHARACTERIZATION OF LATTICE-MATCHED EPITAXIAL-FILMS OF GAXIN1-XAS-INP BY LIQUID-PHASE EPITAXY
    PEARSALL, TP
    HOPSON, RW
    [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4407 - 4409
  • [14] GROWTH AND CHARACTERIZATION OF LATTICE-MATCHED EPITAXIAL-FILMS OF GAXIN1-XAS-INP BY LIQUID-PHASE EPITAXY
    PEARSALL, TP
    HOPSON, RW
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (01) : 133 - 146
  • [15] LIQUID-PHASE EPITAXIAL-GROWTH OF INGAAS ON INP
    SANKARAN, R
    MOON, RL
    ANTYPAS, GA
    [J]. JOURNAL OF CRYSTAL GROWTH, 1976, 33 (02) : 271 - 280
  • [16] SCHOTTKY-BARRIER IN XGA1-X AS ALLOY AVALANCHE PHOTODIODES FOR 1.06 MUM
    STILLMAN, GE
    WOLFE, CM
    FOYT, AG
    LINDLEY, WT
    [J]. APPLIED PHYSICS LETTERS, 1974, 24 (01) : 8 - 10
  • [17] ELECTROABSORPTION AVALANCHE PHOTODIODES
    STILLMAN, GE
    WOLFE, CM
    ROSSI, JA
    DONNELLY, JP
    [J]. APPLIED PHYSICS LETTERS, 1974, 25 (11) : 671 - 673
  • [18] WEBB PP, 1974, RCA REV, V35, P234
  • [19] INSITU IN ETCHING TECHNIQUE FOR LPE INP
    WRICK, V
    SCILLA, GJ
    EASTMAN, LF
    HENRY, RL
    SWIGGARD, EM
    [J]. ELECTRONICS LETTERS, 1976, 12 (16) : 394 - 395