MODELING MESFETS FOR INTERMODULATION ANALYSIS OF MIXERS AND AMPLIFIERS

被引：59

作者：

MAAS, SA

NEILSON, D

机构：

[1] UNIV CALIF LOS ANGELES,DEPT ELECT ENGN,LOS ANGELES,CA 90024

[2] TRW CO INC,1 SPACE PK,REDONDO BEACH,CA 90278

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1990年 / 38卷 / 12期

关键词：

D O I：

10.1109/22.64581

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper examines the problem of modeling GaAs MESFET's for calculations of intermodulation and spurious responses. We show that an adequate model must express not only the absolute I/V characteristics of the device, but also the derivatives of those characteristics. Finally, we propose a large-signal FET model that models those derivatives more realistically than do existing models.

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收藏

页码：1964 / 1971

页数：8

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