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[11] BIAS DEPENDENCE OF GAAS AND INP MESFET PARAMETERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (11) : 1288 - 1296

[12] ON THE PHYSICS AND MODELING OF SMALL SEMICONDUCTOR-DEVICES .3. TRANSIENT-RESPONSE IN THE FINITE COLLISION-DURATION REGIME [J]. SOLID-STATE ELECTRONICS, 1980, 23 (06) : 545 - 549

[13] FREY J, 1980, 1980 P INT EL DEV M, P613

[14] GREILING PT, 1981, LAMBDA, P44

[15] SWITCHING CHARACTERISTICS OF NON-LINEAR FIELD-EFFECT TRANSISTORS - GALLIUM-ARSENIDE VERSUS SILICON [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1980, 28 (05) : 442 - 448

[16] SPONTANEOUS OSCILLATIONS IN GALLIUM-ARSENIDE FIELD-EFFECT TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1980, 23 (02) : 157 - 172

[17] Hockney R. W., 1970, Methods in computational physics. IX. Plasma physics, P135

[18] A FAST DIRECT SOLUTION OF POISSONS EQUATION USING FOURIER ANALYSIS [J]. JOURNAL OF THE ACM, 1965, 12 (01) : 95 - &

[19] HOCKNEY RW, 1970, IBM RC2870 RES REP

[20] INTRINSIC RESPONSE-TIME OF NORMALLY OFF MESFETS OF GAAS, SI, AND INP [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1980, 28 (05) : 456 - 459

[11] BIAS DEPENDENCE OF GAAS AND INP MESFET PARAMETERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (11) : 1288 - 1296

[12] ON THE PHYSICS AND MODELING OF SMALL SEMICONDUCTOR-DEVICES .3. TRANSIENT-RESPONSE IN THE FINITE COLLISION-DURATION REGIME [J]. SOLID-STATE ELECTRONICS, 1980, 23 (06) : 545 - 549

[13] FREY J, 1980, 1980 P INT EL DEV M, P613

[14] GREILING PT, 1981, LAMBDA, P44

[15] SWITCHING CHARACTERISTICS OF NON-LINEAR FIELD-EFFECT TRANSISTORS - GALLIUM-ARSENIDE VERSUS SILICON [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1980, 28 (05) : 442 - 448

[16] SPONTANEOUS OSCILLATIONS IN GALLIUM-ARSENIDE FIELD-EFFECT TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1980, 23 (02) : 157 - 172

[17] Hockney R. W., 1970, Methods in computational physics. IX. Plasma physics, P135

[18] A FAST DIRECT SOLUTION OF POISSONS EQUATION USING FOURIER ANALYSIS [J]. JOURNAL OF THE ACM, 1965, 12 (01) : 95 - &

[19] HOCKNEY RW, 1970, IBM RC2870 RES REP

[20] INTRINSIC RESPONSE-TIME OF NORMALLY OFF MESFETS OF GAAS, SI, AND INP [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1980, 28 (05) : 456 - 459