学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
PHYSICAL BASIS OF SHORT-CHANNEL MESFET OPERATION .2. TRANSIENT-BEHAVIOR
被引:15
作者
:
FARICELLI, JV
论文数:
0
引用数:
0
h-index:
0
FARICELLI, JV
FREY, J
论文数:
0
引用数:
0
h-index:
0
FREY, J
KRUSIUS, JP
论文数:
0
引用数:
0
h-index:
0
KRUSIUS, JP
机构
:
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1982年
/ 29卷
/ 03期
关键词
:
D O I
:
10.1109/T-ED.1982.20712
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:377 / 388
页数:12
相关论文
共 34 条
[1]
SI AND GAAS 0.5 MUM-GATE SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS
BAECHTOLD, W
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, ZURICH RES LAB, RUSCHLIKON 8803, SWITZERLAND
IBM CORP, ZURICH RES LAB, RUSCHLIKON 8803, SWITZERLAND
BAECHTOLD, W
DAETWYLE.K
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, ZURICH RES LAB, RUSCHLIKON 8803, SWITZERLAND
IBM CORP, ZURICH RES LAB, RUSCHLIKON 8803, SWITZERLAND
DAETWYLE.K
FORSTER, T
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, ZURICH RES LAB, RUSCHLIKON 8803, SWITZERLAND
IBM CORP, ZURICH RES LAB, RUSCHLIKON 8803, SWITZERLAND
FORSTER, T
MOHR, TO
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, ZURICH RES LAB, RUSCHLIKON 8803, SWITZERLAND
IBM CORP, ZURICH RES LAB, RUSCHLIKON 8803, SWITZERLAND
MOHR, TO
WALTER, W
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, ZURICH RES LAB, RUSCHLIKON 8803, SWITZERLAND
IBM CORP, ZURICH RES LAB, RUSCHLIKON 8803, SWITZERLAND
WALTER, W
WOLF, P
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, ZURICH RES LAB, RUSCHLIKON 8803, SWITZERLAND
IBM CORP, ZURICH RES LAB, RUSCHLIKON 8803, SWITZERLAND
WOLF, P
[J].
ELECTRONICS LETTERS,
1973,
9
(10)
: 232
-
234
[2]
IMPROVED MICROWAVE SILICON MESFET
BAECHTOLD, W
论文数:
0
引用数:
0
h-index:
0
BAECHTOLD, W
WOLF, P
论文数:
0
引用数:
0
h-index:
0
WOLF, P
[J].
SOLID-STATE ELECTRONICS,
1971,
14
(09)
: 783
-
+
[3]
ON THE PHYSICS AND MODELING OF SMALL SEMICONDUCTOR-DEVICES .1.
BARKER, JR
论文数:
0
引用数:
0
h-index:
0
机构:
COLORADO STATE UNIV,DEPT ELECT ENGN,FT COLLINS,CO 80523
COLORADO STATE UNIV,DEPT ELECT ENGN,FT COLLINS,CO 80523
BARKER, JR
FERRY, DK
论文数:
0
引用数:
0
h-index:
0
机构:
COLORADO STATE UNIV,DEPT ELECT ENGN,FT COLLINS,CO 80523
COLORADO STATE UNIV,DEPT ELECT ENGN,FT COLLINS,CO 80523
FERRY, DK
[J].
SOLID-STATE ELECTRONICS,
1980,
23
(06)
: 519
-
530
[4]
OPTIMIZATION OF GAAS-MESFET LOGIC GATES WITH SUB-NANOSECOND PROPAGATION DELAYS
BARNA, A
论文数:
0
引用数:
0
h-index:
0
机构:
Hewlett-Packard Laboratories, Palo Alto
BARNA, A
LIECHTI, CA
论文数:
0
引用数:
0
h-index:
0
机构:
Hewlett-Packard Laboratories, Palo Alto
LIECHTI, CA
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1979,
14
(04)
: 708
-
715
[5]
FINITE-ELEMENT SIMULATION OF GAAS MESFETS WITH LATERAL DOPING PROFILES AND SUBMICRON GATES
BARNES, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MICHIGAN,DEPT ELECT & COMP ENGN,ELECTR PHYS LAB,ANN ARBOR,MI 48109
UNIV MICHIGAN,DEPT ELECT & COMP ENGN,ELECTR PHYS LAB,ANN ARBOR,MI 48109
BARNES, JJ
LOMAX, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MICHIGAN,DEPT ELECT & COMP ENGN,ELECTR PHYS LAB,ANN ARBOR,MI 48109
UNIV MICHIGAN,DEPT ELECT & COMP ENGN,ELECTR PHYS LAB,ANN ARBOR,MI 48109
LOMAX, RJ
HADDAD, GI
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MICHIGAN,DEPT ELECT & COMP ENGN,ELECTR PHYS LAB,ANN ARBOR,MI 48109
UNIV MICHIGAN,DEPT ELECT & COMP ENGN,ELECTR PHYS LAB,ANN ARBOR,MI 48109
HADDAD, GI
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1976,
23
(09)
: 1042
-
1048
[6]
SATURATION MECHANISM IN 1-MUM GATE GAAS-FET WITH CHANNEL-SUBSTRATE INTERFACIAL BARRIER
BONJOUR, P
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE
THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE
BONJOUR, P
CASTAGNE, R
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE
THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE
CASTAGNE, R
PONE, JF
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE
THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE
PONE, JF
COURAT, JP
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE
THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE
COURAT, JP
BERT, G
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE
THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE
BERT, G
NUZILLAT, G
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE
THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE
NUZILLAT, G
PELTIER, M
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE
THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE
PELTIER, M
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980,
27
(06)
: 1019
-
1024
[7]
COLON F, 1972, THESIS U ILLINOIS UR
[8]
A MESFET MODEL FOR USE IN THE DESIGN OF GAAS INTEGRATED-CIRCUITS
CURTICE, WR
论文数:
0
引用数:
0
h-index:
0
CURTICE, WR
[J].
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,
1980,
28
(05)
: 448
-
456
[9]
SIMPLE-MODEL FOR DETERMINING EFFECTS OF NEGATIVE DIFFERENTIAL MOBILITY AND MAGNITUDE OF SATURATED VELOCITY ON THE PERFORMANCE OF SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS
DAWSON, RH
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
DAWSON, RH
FREY, J
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
FREY, J
[J].
SOLID-STATE ELECTRONICS,
1979,
22
(03)
: 343
-
346
[10]
PROSPECTS FOR ULTRAHIGH-SPEED VLSI GAAS DIGITAL LOGIC
EDEN, RC
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,INTEGRATED CIRCUITS GRP,THOUSAND OAKS,CA 91360
ROCKWELL INT,INTEGRATED CIRCUITS GRP,THOUSAND OAKS,CA 91360
EDEN, RC
WELCH, BM
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,INTEGRATED CIRCUITS GRP,THOUSAND OAKS,CA 91360
ROCKWELL INT,INTEGRATED CIRCUITS GRP,THOUSAND OAKS,CA 91360
WELCH, BM
ZUCCA, R
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,INTEGRATED CIRCUITS GRP,THOUSAND OAKS,CA 91360
ROCKWELL INT,INTEGRATED CIRCUITS GRP,THOUSAND OAKS,CA 91360
ZUCCA, R
LONG, SI
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,INTEGRATED CIRCUITS GRP,THOUSAND OAKS,CA 91360
ROCKWELL INT,INTEGRATED CIRCUITS GRP,THOUSAND OAKS,CA 91360
LONG, SI
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(04)
: 299
-
317
←
1
2
3
4
→
共 34 条
[1]
SI AND GAAS 0.5 MUM-GATE SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS
BAECHTOLD, W
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, ZURICH RES LAB, RUSCHLIKON 8803, SWITZERLAND
IBM CORP, ZURICH RES LAB, RUSCHLIKON 8803, SWITZERLAND
BAECHTOLD, W
DAETWYLE.K
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, ZURICH RES LAB, RUSCHLIKON 8803, SWITZERLAND
IBM CORP, ZURICH RES LAB, RUSCHLIKON 8803, SWITZERLAND
DAETWYLE.K
FORSTER, T
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, ZURICH RES LAB, RUSCHLIKON 8803, SWITZERLAND
IBM CORP, ZURICH RES LAB, RUSCHLIKON 8803, SWITZERLAND
FORSTER, T
MOHR, TO
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, ZURICH RES LAB, RUSCHLIKON 8803, SWITZERLAND
IBM CORP, ZURICH RES LAB, RUSCHLIKON 8803, SWITZERLAND
MOHR, TO
WALTER, W
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, ZURICH RES LAB, RUSCHLIKON 8803, SWITZERLAND
IBM CORP, ZURICH RES LAB, RUSCHLIKON 8803, SWITZERLAND
WALTER, W
WOLF, P
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, ZURICH RES LAB, RUSCHLIKON 8803, SWITZERLAND
IBM CORP, ZURICH RES LAB, RUSCHLIKON 8803, SWITZERLAND
WOLF, P
[J].
ELECTRONICS LETTERS,
1973,
9
(10)
: 232
-
234
[2]
IMPROVED MICROWAVE SILICON MESFET
BAECHTOLD, W
论文数:
0
引用数:
0
h-index:
0
BAECHTOLD, W
WOLF, P
论文数:
0
引用数:
0
h-index:
0
WOLF, P
[J].
SOLID-STATE ELECTRONICS,
1971,
14
(09)
: 783
-
+
[3]
ON THE PHYSICS AND MODELING OF SMALL SEMICONDUCTOR-DEVICES .1.
BARKER, JR
论文数:
0
引用数:
0
h-index:
0
机构:
COLORADO STATE UNIV,DEPT ELECT ENGN,FT COLLINS,CO 80523
COLORADO STATE UNIV,DEPT ELECT ENGN,FT COLLINS,CO 80523
BARKER, JR
FERRY, DK
论文数:
0
引用数:
0
h-index:
0
机构:
COLORADO STATE UNIV,DEPT ELECT ENGN,FT COLLINS,CO 80523
COLORADO STATE UNIV,DEPT ELECT ENGN,FT COLLINS,CO 80523
FERRY, DK
[J].
SOLID-STATE ELECTRONICS,
1980,
23
(06)
: 519
-
530
[4]
OPTIMIZATION OF GAAS-MESFET LOGIC GATES WITH SUB-NANOSECOND PROPAGATION DELAYS
BARNA, A
论文数:
0
引用数:
0
h-index:
0
机构:
Hewlett-Packard Laboratories, Palo Alto
BARNA, A
LIECHTI, CA
论文数:
0
引用数:
0
h-index:
0
机构:
Hewlett-Packard Laboratories, Palo Alto
LIECHTI, CA
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1979,
14
(04)
: 708
-
715
[5]
FINITE-ELEMENT SIMULATION OF GAAS MESFETS WITH LATERAL DOPING PROFILES AND SUBMICRON GATES
BARNES, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MICHIGAN,DEPT ELECT & COMP ENGN,ELECTR PHYS LAB,ANN ARBOR,MI 48109
UNIV MICHIGAN,DEPT ELECT & COMP ENGN,ELECTR PHYS LAB,ANN ARBOR,MI 48109
BARNES, JJ
LOMAX, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MICHIGAN,DEPT ELECT & COMP ENGN,ELECTR PHYS LAB,ANN ARBOR,MI 48109
UNIV MICHIGAN,DEPT ELECT & COMP ENGN,ELECTR PHYS LAB,ANN ARBOR,MI 48109
LOMAX, RJ
HADDAD, GI
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MICHIGAN,DEPT ELECT & COMP ENGN,ELECTR PHYS LAB,ANN ARBOR,MI 48109
UNIV MICHIGAN,DEPT ELECT & COMP ENGN,ELECTR PHYS LAB,ANN ARBOR,MI 48109
HADDAD, GI
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1976,
23
(09)
: 1042
-
1048
[6]
SATURATION MECHANISM IN 1-MUM GATE GAAS-FET WITH CHANNEL-SUBSTRATE INTERFACIAL BARRIER
BONJOUR, P
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE
THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE
BONJOUR, P
CASTAGNE, R
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE
THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE
CASTAGNE, R
PONE, JF
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE
THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE
PONE, JF
COURAT, JP
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE
THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE
COURAT, JP
BERT, G
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE
THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE
BERT, G
NUZILLAT, G
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE
THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE
NUZILLAT, G
PELTIER, M
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE
THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE
PELTIER, M
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980,
27
(06)
: 1019
-
1024
[7]
COLON F, 1972, THESIS U ILLINOIS UR
[8]
A MESFET MODEL FOR USE IN THE DESIGN OF GAAS INTEGRATED-CIRCUITS
CURTICE, WR
论文数:
0
引用数:
0
h-index:
0
CURTICE, WR
[J].
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,
1980,
28
(05)
: 448
-
456
[9]
SIMPLE-MODEL FOR DETERMINING EFFECTS OF NEGATIVE DIFFERENTIAL MOBILITY AND MAGNITUDE OF SATURATED VELOCITY ON THE PERFORMANCE OF SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS
DAWSON, RH
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
DAWSON, RH
FREY, J
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
FREY, J
[J].
SOLID-STATE ELECTRONICS,
1979,
22
(03)
: 343
-
346
[10]
PROSPECTS FOR ULTRAHIGH-SPEED VLSI GAAS DIGITAL LOGIC
EDEN, RC
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,INTEGRATED CIRCUITS GRP,THOUSAND OAKS,CA 91360
ROCKWELL INT,INTEGRATED CIRCUITS GRP,THOUSAND OAKS,CA 91360
EDEN, RC
WELCH, BM
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,INTEGRATED CIRCUITS GRP,THOUSAND OAKS,CA 91360
ROCKWELL INT,INTEGRATED CIRCUITS GRP,THOUSAND OAKS,CA 91360
WELCH, BM
ZUCCA, R
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,INTEGRATED CIRCUITS GRP,THOUSAND OAKS,CA 91360
ROCKWELL INT,INTEGRATED CIRCUITS GRP,THOUSAND OAKS,CA 91360
ZUCCA, R
LONG, SI
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,INTEGRATED CIRCUITS GRP,THOUSAND OAKS,CA 91360
ROCKWELL INT,INTEGRATED CIRCUITS GRP,THOUSAND OAKS,CA 91360
LONG, SI
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(04)
: 299
-
317
←
1
2
3
4
→