PLASMA-MATERIAL INTERACTIONS

被引：39

作者：

HESS, DW

机构：

[1] Department of Chemical Engineering, University of California, Berkeley, California

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1990年 / 8卷 / 03期

关键词：

D O I：

10.1116/1.576829

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Radio frequency glow discharges (plasmas) have found wide use in thin film process technology. For example, plasma enhanced chemical vapor deposition (PECVD) and plasma enhanced etching methods for pattern definition are routine techniques in the fabrication of microelectronic devices. These applications rely on energetic particle (primarily positive ion) bombardment to promote surface chemistry; the bonding structure and properties of deposited films are thereby altered, film etch rates are enhanced, and underlying films or substrates may he affected. Plasma material interactions that control thin film deposition and etching processes are discussed. Specific examples of the role of plasma-assisted processes in establishing the physical and chemical properties of materials in microelectronic device fabrication are presented. © 1990, American Vacuum Society. All rights reserved.

引用

页码：1677 / 1684

页数：8

共 102 条

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