SHORT-RANGE ORDER AND MICROSTRUCTURE IN HYDROGENATED AMORPHOUS-SILICON

被引：5

作者：

DANESH, P ^{[1
]}

PANTCHEV, B ^{[1
]}

SAVATINOVA, I ^{[1
]}

LIAROKAPIS, E ^{[1
]}

RAPTIS, YS ^{[1
]}

机构：

[1] NATL TECH UNIV ATHENS,DEPT PHYS,GR-15773 ATHENS,GREECE

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 11期

关键词：

D O I：

10.1063/1.347537

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An experimental study has been made on the relationship between short-range order and microstructure in hydrogenated amorphous silicon films. The properties of the material have been varied by applying rf power of different magnitudes. The change in the short-range order has been characterized by Raman scattering measurements. Microstructure has been determined by means of field assisted ion exchange technique. The observed correlation between the two structural length scales suggests that the presence of dihydride groups in these materials is a key factor for the release of the silicon network strain.

引用

页码：7656 / 7659

页数：4

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