ETCHING CHARACTERISTICS OF SIO2 IN CHF3 GAS PLASMA

被引：11

作者：

TOYODA, H

KOMIYA, H

ITAKURA, H

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1980年 / 9卷 / 03期

关键词：

D O I：

10.1007/BF02652937

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：569 / 584

页数：16

共 11 条

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[2] ION-SURFACE INTERACTIONS IN PLASMA ETCHING [J].

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WINTERS, HF ;

CHUANG, TJ .

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[3]

EPHRATH LM, 1977, ELECTROCHEM SOC M EX, P376

[4] CONTROL OF RELATIVE ETCH RATES OF SIO2 AND SI IN PLASMA ETCHING [J].

HEINECKE, RAH .

SOLID-STATE ELECTRONICS, 1975, 18 (12) :1146-1147

[5] PLASMA REACTOR DESIGN FOR SELECTIVE ETCHING OF SIO2 ON SI [J].

HEINECKE, RAH .

SOLID-STATE ELECTRONICS, 1976, 19 (12) :1039-1040

[6]

IRVING SM, 1977, OCT KOD MICR SEM P, P55

[7]

ITOGA M, 1977, ELECTROCHEM SOC M EX, P378

[8]

KUROGI Y, 1977, ELECTROCHEM SOC M EX, P373

[9] PROFILE CONTROL BY REACTIVE SPUTTER ETCHING [J].

LEHMANN, HW ;

WIDMER, R .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02) :319-326

[10] PREFERENTIAL SIO2 ETCHING ON SI SUBSTRATE BY PLASMA REACTIVE SPUTTER ETCHING [J].

MATSUO, S ;

TAKEHARA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (01) :175-176

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