FORMATION OF COSI2 ON AMORPHOUS-SILICON BY RTA

被引：10

作者：

DROZDY, G ^{[1
]}

RONKAINEN, H ^{[1
]}

SUNI, I ^{[1
]}

机构：

[1] TECH RES CTR FINLAND,SEMICOND LAB,SF-02150 ESPOO,FINLAND

来源：

APPLIED SURFACE SCIENCE | 1989年 / 38卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(89)90521-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：72 / 79

页数：8

共 9 条

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[3]

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MA, E ;

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[7] CHARACTERIZATION OF A SELF-ALIGNED COBALT SILICIDE PROCESS [J].

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[8]

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[9]

TABASKY M, 1986, RAPID THERMAL P MATE, V52, P272

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