OXIDATION OF SI(111), 7X7 AND 2X1 - A COMPARISON

被引：32

作者：

SU, CY

SKEATH, PR

LINDAU, I

SPICER, WE

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 18卷 / 03期

关键词：

D O I：

10.1116/1.570974

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：843 / 846

页数：4

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共 18 条

[1] ATOMIC AND ELECTRONIC-STRUCTURE OF THE 7X7 RECONSTRUCTED SI(111) SURFACE
CHADI, DJ
BAUER, RS
WILLIAMS, RH
HANSSON, GV
BACHRACH, RZ
MIKKELSEN, JC
HOUZAY, F
GUICHAR, GM
PINCHAUX, R
PETROFF, Y
[J]. PHYSICAL REVIEW LETTERS, 1980, 44 (12) : 799 - 802
[2] LOW-ENERGY ELECTRON-DIFFRACTION FROM SI(111)-2 X 1 - THEORY AND EXPERIMENT
FEDER, R
MONCH, W
AUER, PP
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (05): : L179 - L184
[3] ELECTRON-SPECTROSCOPIC STUDIES OF THE EARLY STAGES OF THE OXIDATION OF SI
GARNER, CM
LINDAU, I
SU, CY
PIANETTA, P
SPICER, WE
[J]. PHYSICAL REVIEW B, 1979, 19 (08): : 3944 - 3956
[4] NEW PHENOMENON IN ABSORPTION OF OXYGEN ON SILICON
GARNER, CM
LINDAU, I
SU, CY
PIANETTA, P
MILLER, JN
SPICER, WE
[J]. PHYSICAL REVIEW LETTERS, 1978, 40 (06) : 403 - 406
[5] STRUCTURE DEPENDENT OXIDATION OF CLEAN SI(111) SURFACES
GUICHAR, GM
SEBENNE, CA
GARRY, GA
BALKANSKI, M
[J]. SURFACE SCIENCE, 1976, 58 (02) : 374 - 378
[6] SURFACE RECONSTRUCTION ON SEMICONDUCTORS
HARRISON, WA
[J]. SURFACE SCIENCE, 1976, 55 (01) : 1 - 19
[7] ELECTRON ORBITAL ENERGIES OF OXYGEN ADSORBED ON SILICON SURFACES AND OF SILICON DIOXIDE
IBACH, H
ROWE, JE
[J]. PHYSICAL REVIEW B, 1974, 10 (02): : 710 - 718
[8] ELECTRONIC-TRANSITIONS OF OXYGEN ADSORBED ON CLEAN SILICON (111) AND (100) SURFACES
IBACH, H
ROWE, JE
[J]. PHYSICAL REVIEW B, 1974, 9 (04): : 1951 - 1957
[9] ADSORPTION OF OXYGEN ON SILICON (111) SURFACES .1.
IBACH, H
HORN, K
DORN, R
LUTH, H
[J]. SURFACE SCIENCE, 1973, 38 (02) : 433 - 454
[10] OXYGEN ON CLEAVED SILICON (111) - EFFECTS OF ATOMIC STEPS AND RESIDUAL GASES
KASUPKE, N
HENZLER, M
[J]. SURFACE SCIENCE, 1980, 92 (2-3) : 407 - 416