SURFACE MODIFICATIONS OF ELECTRONIC MATERIALS INDUCED BY PLASMA-ETCHING

[1] BERGENDAHL AS, 1984, 10TH P ANN TEG PLASM, P1

[2] Coburn J., 1982, AM VACUUM SOC MONOGR

[3] INSITU AUGER-ELECTRON SPECTROSCOPY OF SI AND SIO2 SURFACES PLASMA ETCHED IN CF4-H2 GLOW-DISCHARGES [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) : 5210 - 5213

[4] OPTICAL-EMISSION SPECTROSCOPY OF REACTIVE PLASMAS - A METHOD FOR CORRELATING EMISSION INTENSITIES TO REACTIVE PARTICLE DENSITY [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3134 - 3136

[5] FORMATION OF A SILICON-CARBIDE LAYER DURING CF4/H2 DRY ETCHING OF SI [J]. APPLIED PHYSICS LETTERS, 1985, 47 (06) : 604 - 606

[6] SPECTROSCOPIC DIAGNOSTICS OF CF4-O2 PLASMAS DURING SI AND SIO2 ETCHING PROCESSES [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) : 1259 - 1265

[7] PLASMA POLYMERIZATION OF ETHYLENE AND THE SERIES OF FLUOROETHYLENES - PLASMA EFFLUENT MASS-SPECTROMETRY AND ESCA STUDIES [J]. MACROMOLECULES, 1981, 14 (03) : 855 - 862

[8] ANISOTROPIC ETCHING OF SIO2 IN LOW-FREQUENCY CF4/O2 AND NF3/AR PLASMAS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (01) : 242 - 252

[9] PARAMETER AND REACTOR DEPENDENCE OF SELECTIVE OXIDE RIE IN CF4+H2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (10) : 2282 - 2287

[10] ELECTRONIC-STRUCTURE OF SEMICONDUCTOR SURFACES [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1985, 38 (03): : 205 - 212

[1] BERGENDAHL AS, 1984, 10TH P ANN TEG PLASM, P1

[2] Coburn J., 1982, AM VACUUM SOC MONOGR

[3] INSITU AUGER-ELECTRON SPECTROSCOPY OF SI AND SIO2 SURFACES PLASMA ETCHED IN CF4-H2 GLOW-DISCHARGES [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) : 5210 - 5213

[4] OPTICAL-EMISSION SPECTROSCOPY OF REACTIVE PLASMAS - A METHOD FOR CORRELATING EMISSION INTENSITIES TO REACTIVE PARTICLE DENSITY [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3134 - 3136

[5] FORMATION OF A SILICON-CARBIDE LAYER DURING CF4/H2 DRY ETCHING OF SI [J]. APPLIED PHYSICS LETTERS, 1985, 47 (06) : 604 - 606

[6] SPECTROSCOPIC DIAGNOSTICS OF CF4-O2 PLASMAS DURING SI AND SIO2 ETCHING PROCESSES [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) : 1259 - 1265

[7] PLASMA POLYMERIZATION OF ETHYLENE AND THE SERIES OF FLUOROETHYLENES - PLASMA EFFLUENT MASS-SPECTROMETRY AND ESCA STUDIES [J]. MACROMOLECULES, 1981, 14 (03) : 855 - 862

[8] ANISOTROPIC ETCHING OF SIO2 IN LOW-FREQUENCY CF4/O2 AND NF3/AR PLASMAS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (01) : 242 - 252

[9] PARAMETER AND REACTOR DEPENDENCE OF SELECTIVE OXIDE RIE IN CF4+H2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (10) : 2282 - 2287

[10] ELECTRONIC-STRUCTURE OF SEMICONDUCTOR SURFACES [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1985, 38 (03): : 205 - 212