LIMITATION OF SPACER THICKNESS IN TITANIUM SALICIDE ULSI CMOS TECHNOLOGY

被引：10

作者：

SUNG, JJ

LU, CY

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 11期

关键词：

D O I：

10.1109/55.43110

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：481 / 483

页数：3

共 9 条

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[8]

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