REDUCTION OF POLY-SI DISSOLUTION AND CONTACT RESISTANCE AT AL-N-POLY-SI INTERFACES IN INTEGRATED-CIRCUITS

被引：10

作者：

NAGUIB, HM

HOBBS, LH

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 01期

关键词：

D O I：

10.1149/1.2131386

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：169 / 171

页数：3

相关论文

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