CORRELATION BETWEEN ARSENIC PRECIPITATES AND VACANCY-TYPE DEFECTS IN LOW-TEMPERATURE-GROWN GAAS

被引：9

作者：

HOZHABRI, N

BAILEY, JB

KOYMEN, AR

SHARMA, SC

ALAVI, K

机构：

[1] UNIV TEXAS,DEPT PHYS,ARLINGTON,TX 76019

[2] UNIV TEXAS,DEPT ELECT ENGN,CTR ADV ELECTRON DEVICES & SYST,NSF,ARLINGTON,TX 76019

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1994年 / 6卷 / 31期

关键词：

D O I：

10.1088/0953-8984/6/31/006

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have utilized x-ray photoelectron and variable energy positron beam spectroscopies for depth profiling excess arsenic, arsenic precipitates, and vacancy-type defects in GaAs grown by molecular beam epitaxy at low temperatures (LT-GaAs). XPS results show about 1.3% excess arsenic in as-grown LT-GaAs and a non-uniform depth profile of arsenic concentration in annealed LT-GaAs. Doppler broadening of the positron-electron annihilation radiation (S parameter) reveals a non-uniform depth profile of defects in annealed LT-GaAs. We observe a clear correlation between the depth profile of the S parameter and As in annealed LT-GaAs.

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页码：L455 / L460

页数：6

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