ORIGIN OF THE ENHANCEMENT OF NEGATIVE DIFFERENTIAL RESISTANCE AT LOW-TEMPERATURES IN DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES

被引：12

作者：

WU, JS ^{[1
]}

CHANG, CY ^{[1
]}

LEE, CP ^{[1
]}

WANG, YH ^{[1
]}

KAI, F ^{[1
]}

机构：

[1] NATL CHENG KUNG UNIV,SEMICOND & SYST LABS INST,TAINAN,TAIWAN

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 07期

关键词：

D O I：

10.1109/55.29659

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：301 / 303

页数：3

共 22 条

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[7] ALGAAS/GAAS DOUBLE BARRIER DIODES WITH HIGH PEAK-TO-VALLEY CURRENT RATIO [J].

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[8] EXCELLENT NEGATIVE DIFFERENTIAL RESISTANCE OF INALAS-INGAAS RESONANT TUNNELING BARRIER STRUCTURES GROWN BY MBE [J].

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[9] A PSEUDOMORPHIC IN0.53GA0.47AS ALAS RESONANT TUNNELING BARRIER WITH A PEAK-TO-VALLEY CURRENT RATIO OF 14 AT ROOM-TEMPERATURE [J].

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[10] AI0.48IN0.52AS/GA0.47IN0.53AS RESONANT TUNNELLING DIODES WITH LARGE CURRENT PEAK VALLEY RATIO [J].

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