FEMTOSECOND HOLE THERMALIZATION IN BULK GAAS

被引：53

作者：

TOMMASI, R ^{[1
]}

LANGOT, P ^{[1
]}

VALLEE, F ^{[1
]}

机构：

[1] UNIV BARI,DIPARTMENTO FIS,I-70126 BARI,ITALY

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 11期

关键词：

D O I：

10.1063/1.113201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ultrafast hole relaxation dynamics is selectively investigated in intrinsic bulk GaAs using a high sensitivity two-wavelength pump-probe technique. Nonequilibrium carriers are photoexcited close to the bottom of their respective bands and hole heating is followed by monitoring the transient bleaching of optical transitions involving higher momentum states. Hole heating is found to be dominated by hole-phonon interactions with a thermalization time of the order of 150 fs for carriers densities in the 1017cm-3 range.© 1995 American Institute of Physics.

引用

收藏

页码：1361 / 1363

页数：3

相关论文

共 20 条

[1] FEMTOSECOND CARRIER DYNAMICS IN THE PRESENCE OF A COLD-PLASMA IN GAAS AND ALGAAS [J].

ACIOLI, LH ;

ULMAN, M ;

VALLEE, F ;

FUJIMOTO, JG .

APPLIED PHYSICS LETTERS, 1993, 63 (05) :666-668

[2] FEMTOSECOND RELAXATION OF CARRIERS GENERATED BY NEAR-BAND-GAP OPTICAL-EXCITATION IN COMPOUND SEMICONDUCTORS [J].

BAIR, JE ;

COHEN, D ;

KRUSIUS, JP ;

POLLOCK, CR .

PHYSICAL REVIEW B, 1994, 50 (07) :4355-4370

[3] FEMTOSECOND PHOTON-ECHOES FROM BAND-TO-BAND TRANSITIONS IN GAAS [J].

BECKER, PC ;

FRAGNITO, HL ;

CRUZ, CHB ;

FORK, RL ;

CUNNINGHAM, JE ;

HENRY, JE ;

SHANK, CV .

PHYSICAL REVIEW LETTERS, 1988, 61 (14) :1647-1649

[4] SCATTERING RATES FOR HOLES NEAR THE VALENCE-BAND EDGE IN SEMICONDUCTORS [J].

BRUDEVOLL, T ;

FJELDLY, TA ;

BAEK, J ;

SHUR, MS .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (12) :7373-7382

[5] FEMTOSECOND RELAXATION OF PHOTOEXCITED HOLES IN BULK GALLIUM-ARSENIDE [J].

CHEBIRA, A ;

CHESNOY, J ;

GALE, GM .

PHYSICAL REVIEW B, 1992, 46 (08) :4559-4563

[6] ULTRAFAST TRANSIENT ABSORPTION MEASUREMENT OF THE ELECTRON-LO PHONON-SCATTERING TIME IN GAAS-AL0.33GA0.67AS MULTIPLE-QUANTUM WELLS [J].

COLLINGS, D ;

SCHUMACHER, KL ;

RAKSI, F ;

HUGHES, HP ;

PHILLIPS, RT .

APPLIED PHYSICS LETTERS, 1994, 64 (07) :889-891

[7] INITIAL THERMALIZATION OF PHOTOEXCITED CARRIERS IN GAAS STUDIED BY FEMTOSECOND LUMINESCENCE SPECTROSCOPY [J].

ELSAESSER, T ;

SHAH, J ;

ROTA, L ;

LUGLI, P .

PHYSICAL REVIEW LETTERS, 1991, 66 (13) :1757-1760

[8] HOT-CARRIER COULOMB EFFECTS IN GAAS INVESTIGATED BY FEMTOSECOND SPECTROSCOPY AROUND THE BAND EDGE [J].

GONG, T ;

NIGHAN, WL ;

FAUCHET, PM .

APPLIED PHYSICS LETTERS, 1990, 57 (25) :2713-2715

[9] SPECTRAL-HOLE BURNING AND CARRIER THERMALIZATION IN GAAS AT ROOM-TEMPERATURE [J].

HUNSCHE, S ;

HEESEL, H ;

EWERTZ, A ;

KURZ, H ;

COLLET, JH .

PHYSICAL REVIEW B, 1993, 48 (24) :17818-17826

[10] FEMTOSECOND ABSORPTION SATURATION STUDIES OF HOT CARRIERS IN GAAS AND ALGAAS [J].

LIN, WZ ;

SCHOENLEIN, RW ;

FUJIMOTO, JG ;

IPPEN, EP .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (02) :267-275