GENERAL-THEORY OF PHOSPHORUS AND ARSENIC DIFFUSIONS IN SILICON

被引：16

作者：

YOSHIDA, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 12期

关键词：

D O I：

10.1143/JJAP.19.2427

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2427 / 2440

页数：14

共 35 条

[1] QUANTITATIVE MODEL FOR DIFFUSION OF PHOSPHORUS IN SILICON AND EMITTER DIP EFFECT [J].

FAIR, RB ;

TSAI, JCC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (07) :1107-1118

[2] EFFECT OF COMPLEX-FORMATION ON DIFFUSION OF ARSENIC IN SILICON [J].

FAIR, RB ;

WEBER, GR .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :273-279

[3] DIFFUSION OF ION-IMPLANTED ARSENIC IN SILICON [J].

FAIR, RB ;

TSAI, JCC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) :1689-1696

[4] EFFECT OF STRAIN-INDUCED BAND-GAP NARROWING ON HIGH-CONCENTRATION PHOSPHORUS DIFFUSION IN SILICON [J].

FAIR, RB .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :860-868

[5] QUANTITATIVE THEORY OF RETARDED BASE DIFFUSION IN SILICON N-P-N STRUCTURES WITH ARSENIC EMITTERS [J].

FAIR, RB .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :283-291

[6]

FISTUL VI, 1969, HEAVILY DOPED SEMICO, P249

[7] ASYMMETRIC X-RAY BRAGG REFLECTION AND SHALLOW STRAIN DISTRIBUTION IN SILICON SINGLE-CRYSTALS [J].

FUKUHARA, A ;

TAKANO, Y .

JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1977, 10 (AUG1) :287-290

[8] DETERMINATION OF STRAIN DISTRIBUTIONS FROM X-RAY BRAGG REFLECTION BY SILICON SINGLE-CRYSTALS [J].

FUKUHARA, A ;

TAKANO, Y .

ACTA CRYSTALLOGRAPHICA SECTION A, 1977, 33 (JAN1) :137-142

[9] DONOR DIFFUSION DYNAMICS IN SILICON [J].

GHOSHTAGORE, RN .

PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (02) :397-+

[10] INTRINSIC DIFFUSION OF BORON AND PHOSPHORUS IN SILICON FREE FROM SURFACE EFFECTS [J].

GHOSHTAGORE, RN .

PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (02) :389-+

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