EFFECT OF AMMONIA PLASMA TREATMENT ON PLASMA DEPOSITED SILICON-NITRIDE FILMS SILICON INTERFACE CHARACTERISTICS

被引：20

作者：

ARAI, H ^{[1
]}

TANAKA, K ^{[1
]}

KOHDA, S ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, MUSASHINO ELECT COMMUN LAB, DEPT ELECTR EQUIPMENT, MUSASHINO, TOKYO 180, JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 03期

关键词：

D O I：

10.1116/1.584349

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：831 / 834

页数：4

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