SPATIAL-DISTRIBUTION OF OXYGEN IN LUMINESCENT POROUS SILICON FILMS

被引：13

作者：

TESCHKE, O

机构：

[1] Instituto de Fisica, UNICAMP

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 15期

关键词：

D O I：

10.1063/1.111715

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transmission electron microscopy associated with electron energy loss spectroscopy imaging was used to determine structural spatial variations and compositional variation in heavily doped (0.006 OMEGA cm) and lightly doped (0.4 OMEGA cm) luminescent porous silicon films.

引用

页码：1986 / 1988

页数：3

共 13 条

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VIAL, JC
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[J]. SURFACE SCIENCE, 1991, 254 (1-3) : 195 - 200
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[J]. APPLIED PHYSICS LETTERS, 1990, 57 (10) : 1046 - 1048
[4] VISIBLE-LIGHT EMISSION DUE TO QUANTUM SIZE EFFECTS IN HIGHLY POROUS CRYSTALLINE SILICON
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[J]. NATURE, 1991, 353 (6342) : 335 - 338
[5] INFLUENCE OF STRESS ON THE PHOTOLUMINESCENCE OF POROUS SILICON STRUCTURES
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[J]. APPLIED PHYSICS LETTERS, 1992, 60 (18) : 2285 - 2287
[6] POROUS SILICON FORMATION - A QUANTUM WIRE EFFECT
LEHMANN, V
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[J]. APPLIED PHYSICS LETTERS, 1991, 58 (08) : 856 - 858
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[J]. SURFACE SCIENCE, 1966, 4 (02) : 109 - &
[8] POROUS SILICON FORMATION MECHANISMS
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COLLINS, SD
[J]. JOURNAL OF APPLIED PHYSICS, 1992, 71 (08) : R1 - R22
[9] TESCHE O, 1993, APPL PHYS LETT, V63
[10] TIME-RESOLVED PHOTOLUMINESCENCE OF POROUS SILICON - EVIDENCE FOR TUNNELING LIMITED RECOMBINATION IN A BAND OF LOCALIZED STATES
TESSLER, LR
ALVAREZ, F
TESCHKE, O
[J]. APPLIED PHYSICS LETTERS, 1993, 62 (19) : 2381 - 2383

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