REDISTRIBUTION OF SB IN AN ATOMIC-LAYER-DOPED SI

被引：7

作者：

FUKATSU, S

KUBO, S

SHIRAKI, Y

ITO, R

机构：

[1] Research Center for Advanced Science and Technology, University of Tokyo, Meguro-ku, Tokyo 153

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 11期

关键词：

D O I：

10.1063/1.104348

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the redistribution of an atomic-layer-doped (ALD) Sb in Si upon post-growth annealing using secondary-ion mass spectrometry (SIMS). Shoulder development in the SIMS profile was observed after annealing over 710-degrees-C, suggesting the presence of two different diffusion mechanisms. Diffusivities were found to be in excess of the bulk diffusivity and were concentration dependent above n(Sb) almost-equal-to 5 X 10(17) cm-3. Asymmetric diffusion of ALD Sb in the epitaxial layers and Sb segregation at the oxide interface were also observed.

引用

收藏

页码：1152 / 1154

页数：3

相关论文

共 11 条

[1] STRAIN-INDUCED TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED SI/SIXGE1-X SUPERLATTICES [J].

ABSTREITER, G ;

BRUGGER, H ;

WOLF, T ;

JORKE, H ;

HERZOG, HJ .

PHYSICAL REVIEW LETTERS, 1985, 54 (22) :2441-2444

[2] POST-GROWTH DIFFUSION OF SI IN DELTA-DOPED GAAS GROWN BY MBE [J].

BEALL, RB ;

CLEGG, JB ;

CASTAGNE, J ;

HARRIS, JJ ;

MURRAY, R ;

NEWMAN, RC .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1989, 4 (12) :1171-1175

[3]

FUKATSU S, UNPUB

[4]

GHEZZO M, 1972, J ELECTROCHEM SOC, V119, P977, DOI 10.1149/1.2404381

[5]

HU SM, 1973, ATOMIC DIFFUSION SEM, pCH5

[6] ATOMIC LAYER DOPED FIELD-EFFECT TRANSISTOR FABRICATED USING SI MOLECULAR-BEAM EPITAXY [J].

NAKAGAWA, K ;

VANGORKUM, AA ;

SHIRAKI, Y .

APPLIED PHYSICS LETTERS, 1989, 54 (19) :1869-1871

[7] BERYLLIUM DELTA-DOPING OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

SCHUBERT, EF ;

KUO, JM ;

KOPF, RF ;

LUFTMAN, HS ;

HOPKINS, LC ;

SAUER, NJ .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (04) :1969-1979

[8] THE DELTA-DOPED FIELD-EFFECT TRANSISTOR [J].

SCHUBERT, EF ;

PLOOG, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (08) :L608-L610

[9] STRUCTURAL CHARACTERIZATION OF AN SB DELTA-DOPING LAYER IN SILICON [J].

SLIJKERMAN, WFJ ;

ZAGWIJN, PM ;

VANDERVEEN, JF ;

VANGORKUM, AA ;

VANDEWALLE, GFA .

APPLIED PHYSICS LETTERS, 1989, 55 (10) :963-965

[10] GROWTH AND CHARACTERIZATION OF ATOMIC LAYER DOPING STRUCTURES IN SI [J].

VANGORKUM, AA ;

NAKAGAWA, K ;

SHIRAKI, Y .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (06) :2485-2492