OBSERVATION OF CARRIER-CONCENTRATION-DEPENDENT REFLECTIONLESS TUNNELING IN A SUPERCONDUCTOR 2-DIMENSIONAL-ELECTRON-GAS SUPERCONDUCTOR STRUCTURE

被引：29

作者：

BAKKER, SJM

VANDERDRIFT, E

KLAPWIJK, TM

JAEGER, HM

RADELAAR, S

机构：

[1] UNIV GRONINGEN,DEPT APPL PHYS,9747 AG GRONINGEN,NETHERLANDS

[2] UNIV GRONINGEN,CTR MAT SCI,9747 AG GRONINGEN,NETHERLANDS

[3] UNIV CHICAGO,JAMES FRANCK INST,CHICAGO,IL 60637

[4] UNIV CHICAGO,DEPT PHYS,CHICAGO,IL 60637

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.49.13275

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the conductance of a short (<100 nm) silicon-based two-dimensional electron gas with superconducting source and drain electrodes. Below 1 K a zero-bias enhanced conductance is observed which depends on the carrier concentration in the electron gas. The data can qualitatively be understood as due to reflectionless tunneling, i.e., quantum-coherent-enhanced Andreev scattering.

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收藏

页码：13275 / 13278

页数：4

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