共 10 条
- [1] DAMAGE-FREE REACTIVE ION ETCHING OF GAAS-FET GATE RECESS [J]. ELECTRONICS LETTERS, 1989, 25 (24) : 1617 - 1618
- [2] APPLICATION OF REACTIVE-ION-BEAM ETCHING TO RECESSED-GATE GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 889 - 893
- [3] SELECTIVE REACTIVE ION ETCHING FOR SHORT-GATE-LENGTH GAAS/ALGAAS/INGAAS PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTORS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06): : 1493 - 1496
- [4] REACTIVE ION ETCHING DAMAGE TO GAAS-LAYERS WITH ETCH STOPS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (05): : 1573 - 1576
- [5] LIN BJF, 1988, IEEE GAAS INTEGRATED, P143
- [6] DRY ETCH INDUCED DAMAGE IN GAAS INVESTIGATED USING RAMAN-SCATTERING SPECTROSCOPY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (03): : 556 - 560
- [7] SURFACE DAMAGE OF REACTIVE ION-BEAM ETCHED GAAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (06): : L510 - L512
- [9] SALIMIAN S, 1988, J VAC SCI TECHNOL B, V6, P141