ANALYSIS OF 2-STEP THERMAL-OXIDATION OF SILICON

被引：2

作者：

GHIBAUDO, G

机构：

来源：

关键词：

D O I：

10.1063/1.339842

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3485 / 3488

页数：4

共 20 条

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FARGEIX, A ;

GHIBAUDO, G .

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GHIBAUDO, G .

FARGEIX, A ;

GHIBAUDO, G .

[5] MODELING OF SILICON OXIDATION BASED ON STRESS-RELAXATION [J].

GHIBAUDO, G .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1987, 55 (02) :147-158

[6]

GHIBAUDO G, UNPUB

[7]

GHIBAUDO G, 1987, PHYSICS TECHNOLOGY A

HAMASAKI, M .

IRENE, EA .

[10]

Kao D.-B., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P388