MODELING OF SILICON OXIDATION BASED ON STRESS-RELAXATION

被引：24

作者：

GHIBAUDO, G

机构：

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1987年 / 55卷 / 02期

关键词：

D O I：

10.1080/13642818708211201

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：147 / 158

页数：12

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